黑磷、硒化亚锗和二硫化钼的亲和势

The electron affinity of BP is about 4.4 eV and the band gap of the bulk and monolayer BP is 0.3 eV and about 2.0 eV, respectively[1].

GeSe process a small work function (WF) of 4.4–4.8 approaching to the electron affinity of to the electron affinity of InSe (4.6 eV)[2].

Bulk GeSe has an electron affinity of about 4.09 eV and has an energy bandgap of 1.1–1.2 eV[3]

The results indicate that the few-layer GeSe presents a robust direct band gap, which decreases with increasing the thickness from bilayer (1.15 eV) to six-layer (1.00 eV) around the X point. Furthermore, the work function increases rapidly from monolayer (4.44 eV) to trilayer (4.95 eV).[4]

The work functions of as-prepared 1- to 6-layer MoS2 nanoflakes were 5.15 − 5.39 eV and increased with increasing layer number[5].

Our findings reveal that the semiconductor 2H-MoS2 exhibits both n- and p-type behavior, and the work function as measured by the Kelvin probe is found to vary from 4.4 to 5.3 eV.[6]

We show that the Schottky barriers between metals and the MoS 2 cannot be predicted by simply comparing the metal work function to the MoS 2 electron affinity[7]

参考文献

[1] Charge trap memory based on few-layer black phosphorus

[2] Reversible Half Wave Rectifier Based on 2D InSe/GeSe Heterostructure with Near-Broken Band Alignment

[3] WSe2/GeSe heterojunction photodiode with giant gate tunability

[4] Layer-controlled band alignment, work function and optical properties of few-layer GeSe

[5] Layer-number-dependent Work Function of MoS2 Nanoflakes

[6] Impurities and Electronic Property Variations of Natural MoS2 Crystal Surfaces

[7] Defect-Dominated Doping and Contact Resistance in MoS2

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