黑磷、硒化亚锗和二硫化钼的亲和势
The electron affinity of BP is about 4.4 eV and the band gap of the bulk and monolayer BP is 0.3 eV and about 2.0 eV, respectively[1]. GeSe process a small work function (WF) of 4.4–4.8 ... 阅读更多
成一家之言
The electron affinity of BP is about 4.4 eV and the band gap of the bulk and monolayer BP is 0.3 eV and about 2.0 eV, respectively[1]. GeSe process a small work function (WF) of 4.4–4.8 ... 阅读更多
这篇文章记录了锁相放大器电压计算方法 The ability to convert light into an electrical signal with high efficiencies and controllable dynamics,is a major need in photonics and optoelectronics. In the Terahertz (THz) freq ... 阅读更多
We report on terahertz (THz) detectors with a high performance at room temperatureusing EuBiTe3 crystals as the active material under mechanisms of bolometric and photothermoelectric effects (PTE). Ou ... 阅读更多
Abstract 一种具有高光电响应率的黑磷晶体、二维黑磷PN结及其制备方法与应用。所述具有高光电响应率的黑磷晶体为单晶,空间点群Cmca(no.64),晶胞参数为α=3.2~3.4Å,b=10.4~10.6Å,c=4.3~4.5Å,层间距 4~6Å,具有高光电响应率、半导体类型可调等优点,且其制备方法简单,条件温和,产率高、成本低、污染小。所述二维黑磷PN结包括二维黑磷薄膜,所述薄膜的第一区域被 ... 阅读更多
测试的时候,根据图1,可以知道正极是较厚的黑磷,负极是较薄的黑磷。结合下面的IV曲线,如果理解为一个二极管的话,是正偏状态(虽然谈不上截止)。 同一种材料的不均匀性造成了电学上的不同。 黑磷越厚,带隙越窄,自由载流子越多。这种不均匀性,恰恰可能是光电流容易分离的契机。 -2.00E+00 -3.85E-08 -1.90E+00 -3.66E-08 -1.80E+00 -3.48E-08 -1.70 ... 阅读更多