黑磷、硒化亚锗和二硫化钼的亲和势
The electron affinity of BP is about 4.4 eV and the band gap of the bulk and monolayer BP is 0.3 eV and about 2.0 eV, respectively[1]. GeSe process a small work function (WF) of 4.4–4.8 … 阅读更多
成一家之言
The electron affinity of BP is about 4.4 eV and the band gap of the bulk and monolayer BP is 0.3 eV and about 2.0 eV, respectively[1]. GeSe process a small work function (WF) of 4.4–4.8 … 阅读更多
这篇文章记录了锁相放大器电压计算方法 The ability to convert light into an electrical signal with high efficiencies and controllable dynamics,is a major need in photonics and optoelectronics. In the Terahertz (THz) freq … 阅读更多
We report on terahertz (THz) detectors with a high performance at room temperatureusing EuBiTe3 crystals as the active material under mechanisms of bolometric and photothermoelectric effects (PTE). Ou … 阅读更多
Abstract 一种具有高光电响应率的黑磷晶体、二维黑磷PN结及其制备方法与应用。所述具有高光电响应率的黑磷晶体为单晶,空间点群Cmca(no.64),晶胞参数为α=3.2~3.4Å,b=10.4~10.6Å,c=4.3~4.5Å,层间距 4~6Å,具有高光电响应率、半导体类型可调等优点,且其制备方法简单,条件温和,产率高、成本低、污染小。所述二维黑磷PN结包括二维黑磷薄膜,所述薄膜的第一区域被 … 阅读更多
测试的时候,根据图1,可以知道正极是较厚的黑磷,负极是较薄的黑磷。结合下面的IV曲线,如果理解为一个二极管的话,是正偏状态(虽然谈不上截止)。 同一种材料的不均匀性造成了电学上的不同。 黑磷越厚,带隙越窄,自由载流子越多。这种不均匀性,恰恰可能是光电流容易分离的契机。 -2.00E+00 -3.85E-08 -1.90E+00 -3.66E-08 -1.80E+00 -3.48E-08 -1.70 … 阅读更多